STF42N65M5
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- Mfr.Part #
- STF42N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 33A TO220FP
- Stock
- 11,910
- In Stock ：
- 11,910
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 79mOhm
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Vgs (Max) :
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4650pF @ 100V
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Length :
- 10.4mm
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- Power Dissipation :
- 40W
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3 Full Pack
- Threshold Voltage :
- 4V
- Turn On Delay Time :
- 61 ns
- Power Dissipation-Max :
- 40W Tc
- Factory Lead Time :
- 17 Weeks
- Packaging :
- Tube
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Turn-Off Delay Time :
- 65 ns
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 4.6mm
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 33A
- Series :
- MDmesh™ V
- Gate to Source Voltage (Vgs) :
- 25V
- Drain to Source Breakdown Voltage :
- 650V
- Rds On (Max) @ Id, Vgs :
- 79m Ω @ 16.5A, 10V
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Height :
- 9.3mm
- JEDEC-95 Code :
- TO-220AB
- Rise Time :
- 24ns
- Base Part Number :
- STF42N
- Fall Time (Typ) :
- 13 ns
- Mount :
- Through Hole
- Case Connection :
- Isolated
- Avalanche Energy Rating (Eas) :
- 950 mJ
- Operating Temperature :
- 150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- FET Type :
- N-Channel
- Datasheets
- STF42N65M5
N-Channel Tube 79m Ω @ 16.5A, 10V ±25V 4650pF @ 100V 100nC @ 10V TO-220-3 Full Pack
STF42N65M5 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 950 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4650pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 33A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 650V, and this device has a drainage-to-source breakdown voltage of 650VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 65 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 61 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 25V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STF42N65M5 Features
the avalanche energy rating (Eas) is 950 mJ
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 65 ns
a threshold voltage of 4V
STF42N65M5 Applications
There are a lot of STMicroelectronics
STF42N65M5 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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