STF45N10F7
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- Mfr.Part #
- STF45N10F7
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 30A TO220FP
- Stock
- 8,174
- In Stock ：
- 8,174
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Weight :
- 329.988449mg
- Drain to Source Voltage (Vdss) :
- 100V
- Fall Time (Typ) :
- 8 ns
- Continuous Drain Current (ID) :
- 30A
- ECCN Code :
- EAR99
- Rise Time :
- 17ns
- Gate to Source Voltage (Vgs) :
- 20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-220-3 Full Pack
- Length :
- 10.6mm
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Base Part Number :
- STF45N
- Power Dissipation-Max :
- 25W Tc
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 1640pF @ 50V
- Series :
- DeepGATE™, STripFET™ VII
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 15A, 10V
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 16.4mm
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Width :
- 4.6mm
- Turn-Off Delay Time :
- 24 ns
- Operating Temperature :
- -55°C~175°C TJ
- Number of Channels :
- 1
- Turn On Delay Time :
- 15 ns
- Datasheets
- STF45N10F7
N-Channel Tube 18m Ω @ 15A, 10V 1640pF @ 50V 25nC @ 10V 100V TO-220-3 Full Pack
STF45N10F7 Description
STF45N10F7 utilizes the 7th generation of design rules of ST’s proprietary STripFET? technology, with a new gate structure. The Power MOSFET that results has the lowest RDS(on) among all packages.
STF45N10F7 Features
-
Ultra-low on-resistance
-
100% avalanche tested
-
Maximum Power Dissipation (Pd): 25 W
-
Maximum Drain-Source Voltage |Vds|: 100 V
-
Maximum Gate-Source Voltage |Vgs|: 20 V
-
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
-
Maximum Drain Current |Id|: 30 A
-
Maximum Junction Temperature (Tj): 175 °C
-
Total Gate Charge (Qg): 25 nC
-
Rise Time (tr): 17 nS
-
Drain-Source Capacitance (Cd): 360 pF
-
Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm
-
Package: TO-220FP
STF45N10F7 Applications
-
Switching applications
-
Audio Amplifier Stages
-
Switching load of up to -10A
-
High voltage applications (Up to 140V)
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