STF4N80K5
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- Mfr.Part #
- STF4N80K5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 3A TO220FP
- Stock
- 9,900
- In Stock ：
- 9,900
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 4.6mm
- Drain Current-Max (Abs) (ID) :
- 3A
- Resistance :
- 2.5Ohm
- Lead Free :
- Lead Free
- Drain to Source Voltage (Vdss) :
- 800V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Mount :
- Through Hole
- DS Breakdown Voltage-Min :
- 800V
- Number of Channels :
- 1
- Height :
- 16.4mm
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Radiation Hardening :
- No
- Factory Lead Time :
- 17 Weeks
- Base Part Number :
- STF4N
- Avalanche Energy Rating (Eas) :
- 74.5 mJ
- Series :
- SuperMESH5™
- Continuous Drain Current (ID) :
- 3A
- Vgs (Max) :
- ±30V
- Case Connection :
- Isolated
- Turn-Off Delay Time :
- 36 ns
- Number of Elements :
- 1
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 175pF @ 100V
- Gate to Source Voltage (Vgs) :
- 30V
- Mounting Type :
- Through Hole
- Rise Time :
- 15ns
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 10.5nC @ 10V
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 21 ns
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 2.5 Ω @ 1.5A, 10V
- Turn On Delay Time :
- 16.5 ns
- Package / Case :
- TO-220-3 Full Pack
- Number of Pins :
- 3
- Length :
- 10.4mm
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 20W Tc
- JEDEC-95 Code :
- TO-220AB
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Transistor Element Material :
- SILICON
- Datasheets
- STF4N80K5
N-Channel Tube 2.5 Ω @ 1.5A, 10V ±30V 175pF @ 100V 10.5nC @ 10V 800V TO-220-3 Full Pack
STF4N80K5 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 74.5 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 175pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 3A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 3A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 36 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16.5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 800V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STF4N80K5 Features
the avalanche energy rating (Eas) is 74.5 mJ
a continuous drain current (ID) of 3A
the turn-off delay time is 36 ns
a 800V drain to source voltage (Vdss)
STF4N80K5 Applications
There are a lot of STMicroelectronics
STF4N80K5 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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