STF4N62K3
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- Mfr.Part #
- STF4N62K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 620V 3.8A TO220FP
- Stock
- 5,900
- In Stock ：
- 5,900
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 10.4mm
- Turn On Delay Time :
- 10 ns
- Series :
- SuperMESH3™
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-220-3 Full Pack
- Rise Time :
- 9ns
- Operating Temperature :
- 150°C TJ
- Case Connection :
- Isolated
- Power Dissipation-Max :
- 25W Tc
- Radiation Hardening :
- No
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 3.8A
- Turn-Off Delay Time :
- 29 ns
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 620V
- Resistance :
- 2Ohm
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 1.9A, 10V
- Power Dissipation :
- 25W
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Width :
- 4.6mm
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- FET Type :
- N-Channel
- JEDEC-95 Code :
- TO-220AB
- Height :
- 16.4mm
- Pulsed Drain Current-Max (IDM) :
- 15.2A
- Mount :
- Through Hole
- Fall Time (Typ) :
- 19 ns
- Base Part Number :
- STF4N
- JESD-609 Code :
- e3
- Threshold Voltage :
- 3.75V
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 550pF @ 50V
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 3.8A Tc
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 12 Weeks
- Pin Count :
- 3
- Datasheets
- STF4N62K3
N-Channel Tube 2 Ω @ 1.9A, 10V ±30V 550pF @ 50V 22nC @ 10V TO-220-3 Full Pack
STF4N62K3 Overview
A device's maximal input capacitance is 550pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 3.8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 620V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 29 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 15.2A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3.75V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
STF4N62K3 Features
a continuous drain current (ID) of 3.8A
a drain-to-source breakdown voltage of 620V voltage
the turn-off delay time is 29 ns
based on its rated peak drain current 15.2A.
a threshold voltage of 3.75V
STF4N62K3 Applications
There are a lot of STMicroelectronics
STF4N62K3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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