STF4N52K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

3.75V

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Pin Count :

3

Rise Time :

7ns

Width :

6.6mm

Power Dissipation-Max :

20W Tc

Power Dissipation :

20W

Packaging :

Tube

Height :

2.4mm

Length :

7mm

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Fall Time (Typ) :

14 ns

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole

Element Configuration :

Single

Operating Temperature :

150°C TJ

Series :

SuperMESH3™

Terminal Finish :

Matte Tin (Sn) - annealed

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

21 ns

Transistor Element Material :

SILICON

Number of Terminations :

2

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Resistance :

2.6Ohm

Turn On Delay Time :

8 ns

Mount :

Surface Mount, Through Hole

Drain to Source Breakdown Voltage :

525V

Base Part Number :

STF4N

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Rds On (Max) @ Id, Vgs :

2.6 Ω @ 1.25A, 10V

Package / Case :

TO-220-3 Full Pack

FET Type :

N-Channel

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

2.5A

ECCN Code :

EAR99

JEDEC-95 Code :

TO-252

Input Capacitance (Ciss) (Max) @ Vds :

334pF @ 100V

Additional Feature :

ULTRA-LOW RESISTANCE

Vgs (Max) :

±30V

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2