STE48NM60

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Mfr.Part #
STE48NM60
Manufacturer
STMicroelectronics
Package / Case
ISOTOP
Datasheet
Download
Description
MOSFET N-CH 650V 48A ISOTOP
Stock
12,905
In Stock :
12,905

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Drain Current-Max (Abs) (ID) :
30A
Lead Free :
Contains Lead
Configuration :
SINGLE WITH BUILT-IN DIODE
Avalanche Energy Rating (Eas) :
850 mJ
Current - Continuous Drain (Id) @ 25°C :
48A Tc
Rise Time :
20ns
Pulsed Drain Current-Max (IDM) :
192A
Transistor Element Material :
SILICON
Number of Elements :
1
RoHS Status :
Non-RoHS Compliant
Current Rating :
48A
Mount :
Chassis Mount
Vgs (Max) :
±30V
Base Part Number :
STE48
FET Type :
N-Channel
Drain-source On Resistance-Max :
0.11Ohm
Vgs(th) (Max) @ Id :
5V @ 250μA
Case Connection :
Isolated
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Voltage (Vdss) :
650V
Gate Charge (Qg) (Max) @ Vgs :
134nC @ 10V
Terminal Position :
UPPER
Qualification Status :
Not Qualified
Pin Count :
4
Voltage - Rated DC :
600V
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
150°C TJ
Continuous Drain Current (ID) :
48A
Mounting Type :
Chassis Mount
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
110m Ω @ 22.5A, 10V
Series :
MDmesh™
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
3800pF @ 25V
Number of Terminations :
4
Packaging :
Tube
Terminal Form :
UNSPECIFIED
JESD-30 Code :
R-XUFM-X4
Package / Case :
ISOTOP
Power Dissipation-Max :
450W Tc
Datasheets
STE48NM60
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STE48NM60 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STE48, Operating Temperature:150°C TJ, Mounting Type:Chassis Mount, Number of Terminations:4, Package / Case:ISOTOP, STE48NM60 pinout, STE48NM60 datasheet PDF, STE48NM60 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STE48NM60 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STE48NM60


N-Channel Tube 110m Ω @ 22.5A, 10V ±30V 3800pF @ 25V 134nC @ 10V 650V ISOTOP

STE48NM60 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 850 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3800pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 48A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 30A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 192A.Operating this transistor requires a 650V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

STE48NM60 Features


the avalanche energy rating (Eas) is 850 mJ
a continuous drain current (ID) of 48A
based on its rated peak drain current 192A.
a 650V drain to source voltage (Vdss)


STE48NM60 Applications


There are a lot of STMicroelectronics
STE48NM60 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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