STD8NM60ND

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Mfr.Part #
STD8NM60ND
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 600V 7A DPAK
Stock
7,938
In Stock :
7,938

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation :
70W
Drain Current-Max (Abs) (ID) :
7A
FET Type :
N-Channel
Number of Elements :
1
Packaging :
Tape and Reel (TR)
Turn-Off Delay Time :
37 ns
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
REACH SVHC :
No SVHC
Drain to Source Breakdown Voltage :
600V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Form :
Gull wing
Vgs(th) (Max) @ Id :
5V @ 250μA
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
Matte Tin (Sn) - annealed
Transistor Element Material :
SILICON
Fall Time (Typ) :
22 ns
JESD-30 Code :
R-PSSO-G2
Avalanche Energy Rating (Eas) :
200 mJ
Lead Free :
Lead Free
Vgs (Max) :
±30V
Nominal Vgs :
4 V
Pin Count :
3
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
30V
Number of Pins :
3
Rise Time :
22ns
Element Configuration :
Single
Mount :
Surface Mount
Power Dissipation-Max :
70W Tc
Threshold Voltage :
4V
Number of Terminations :
2
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
260
Resistance :
700mOhm
Base Part Number :
STD8N
Current - Continuous Drain (Id) @ 25°C :
7A Tc
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
Series :
FDmesh™ II
JESD-609 Code :
e3
Radiation Hardening :
No
Mounting Type :
Surface Mount
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Continuous Drain Current (ID) :
7A
Operating Temperature :
150°C TJ
Turn On Delay Time :
9 ns
Pbfree Code :
yes
Pulsed Drain Current-Max (IDM) :
28A
Rds On (Max) @ Id, Vgs :
700m Ω @ 3.5A, 10V
Case Connection :
DRAIN
Input Capacitance (Ciss) (Max) @ Vds :
560pF @ 50V
Datasheets
STD8NM60ND
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STD8NM60ND from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:2, Base Part Number:STD8N, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:150°C TJ, STD8NM60ND pinout, STD8NM60ND datasheet PDF, STD8NM60ND amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STD8NM60ND ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STD8NM60ND


N-Channel Tape & Reel (TR) 700m Ω @ 3.5A, 10V ±30V 560pF @ 50V 22nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

STD8NM60ND Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 200 mJ.A device's maximal input capacitance is 560pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 7A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 37 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 28A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).

STD8NM60ND Features


the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 37 ns
based on its rated peak drain current 28A.
a threshold voltage of 4V


STD8NM60ND Applications


There are a lot of STMicroelectronics
STD8NM60ND applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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