STD80N4F6

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Mfr.Part #
STD80N4F6
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 40V 80A DPAK
Stock
7,521
In Stock :
7,521

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Rise Time :
7.6ns
Mount :
Surface Mount
Operating Temperature :
-55°C~175°C TJ
Element Configuration :
Single
Drain to Source Breakdown Voltage :
40V
Turn-Off Delay Time :
46.1 ns
Series :
Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
Fall Time (Typ) :
11.9 ns
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Height :
2.4mm
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number :
STD80
Number of Pins :
3
ECCN Code :
EAR99
Lead Free :
Lead Free
Turn On Delay Time :
10.5 ns
Power Dissipation-Max :
70W Tc
Resistance :
6mOhm
Radiation Hardening :
No
Packaging :
Cut Tape (CT)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
6m Ω @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs :
36nC @ 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Number of Elements :
1
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2150pF @ 25V
Width :
6.2mm
Length :
6.6mm
Continuous Drain Current (ID) :
80A
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Mounting Type :
Surface Mount
Power Dissipation :
70W
Datasheets
STD80N4F6
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STD80N4F6 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Base Part Number:STD80, Number of Pins:3, Mounting Type:Surface Mount, STD80N4F6 pinout, STD80N4F6 datasheet PDF, STD80N4F6 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STD80N4F6 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STD80N4F6


N-Channel Cut Tape (CT) 6m Ω @ 40A, 10V ±20V 2150pF @ 25V 36nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

STD80N4F6    Description


  The device is an N-channel power MOSFET developed by the 6th generation STripFET "DeepGATE" technology and has a new gate structure. The resulting power MOSFET shows the lowest RDS (on) of all packages.

 

STD80N4F6     Features


? Designed for automotive applications and

AEC-Q101 qualified

? Low gate charge

? Very low on-resistance

? High avalanche ruggedness


STD80N4F6    Applications


? Switching applications


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