STD8NM60N

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Mfr.Part #
STD8NM60N
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 600V 7A DPAK
Stock
1,263
In Stock :
1,263

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
yes
Terminal Form :
Gull wing
Packaging :
Tape and Reel (TR)
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
2
Base Part Number :
STD8N
Number of Elements :
1
Fall Time (Typ) :
10 ns
Mount :
Surface Mount
FET Type :
N-Channel
Number of Pins :
3
Avalanche Energy Rating (Eas) :
200 mJ
Peak Reflow Temperature (Cel) :
260
Operating Mode :
ENHANCEMENT MODE
Pulsed Drain Current-Max (IDM) :
28A
Lead Free :
Lead Free
Additional Feature :
AVALANCHE RATED
Input Capacitance (Ciss) (Max) @ Vds :
560pF @ 50V
Current - Continuous Drain (Id) @ 25°C :
7A Tc
Drain-source On Resistance-Max :
0.65Ohm
Gate to Source Voltage (Vgs) :
25V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation :
70W
Rise Time :
12ns
Vgs (Max) :
±25V
Reach Compliance Code :
not_compliant
Rds On (Max) @ Id, Vgs :
650m Ω @ 3.5A, 10V
Series :
MDmesh™ II
Terminal Finish :
Matte Tin (Sn)
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
19nC @ 10V
Element Configuration :
Single
Transistor Application :
SWITCHING
Time@Peak Reflow Temperature-Max (s) :
30
Transistor Element Material :
SILICON
Turn-Off Delay Time :
40 ns
Power Dissipation-Max :
70W Tc
Drain to Source Breakdown Voltage :
600V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSSO-G2
Drain Current-Max (Abs) (ID) :
7A
Vgs(th) (Max) @ Id :
4V @ 250µA
Qualification Status :
Not Qualified
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Surface Mount
JESD-609 Code :
e3
Continuous Drain Current (ID) :
7A
Pin Count :
3
ECCN Code :
EAR99
Datasheets
STD8NM60N
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STD8NM60N from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Base Part Number:STD8N, Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, STD8NM60N pinout, STD8NM60N datasheet PDF, STD8NM60N amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STD8NM60N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STD8NM60N


N-Channel Tape & Reel (TR) 650m Ω @ 3.5A, 10V ±25V 560pF @ 50V 19nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

STD8NM60N Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.A device's maximum input capacitance is 560pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.Its drain current is 7A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 40 ns.Its maximum pulsed drain current is 28A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.This device uses no drive voltage (10V) to reduce its overall power consumption.

STD8NM60N Features


the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 28A.


STD8NM60N Applications


There are a lot of STMicroelectronics
STD8NM60N applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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