STD8NM60N-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Dual Supply Voltage :

600V

Gate to Source Voltage (Vgs) :

25V

Vgs (Max) :

±25V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Continuous Drain Current (ID) :

3.5A

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Termination :

Through Hole

Turn-Off Delay Time :

40 ns

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Part Number :

STD8N

Rise Time :

12ns

Number of Pins :

3

ECCN Code :

EAR99

Power Dissipation-Max :

70W Tc

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Fall Time (Typ) :

10 ns

Power Dissipation :

70W

Drain Current-Max (Abs) (ID) :

7A

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 50V

Mounting Type :

Through Hole

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Nominal Vgs :

3 V

Rds On (Max) @ Id, Vgs :

650m Ω @ 3.5A, 10V

Drain to Source Breakdown Voltage :

600V

Number of Elements :

1

Drain-source On Resistance-Max :

0.65Ohm

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Mount :

Through Hole

Additional Feature :

AVALANCHE RATED

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

28A

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

Not Qualified

Packaging :

Tube

Avalanche Energy Rating (Eas) :

200 mJ

Number of Terminations :

3

Series :

MDmesh™ II