STD8N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

6A

Height :

2.4mm

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Factory Lead Time :

17 Weeks

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Turn-Off Delay Time :

32 ns

Drain Current-Max (Abs) (ID) :

6A

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

800V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Rise Time :

14ns

Case Connection :

DRAIN

Resistance :

950mOhm

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 100V

Rds On (Max) @ Id, Vgs :

950m Ω @ 3A, 10V

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Contact Plating :

Tin

Radiation Hardening :

No

Power Dissipation-Max :

110W Tc

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Number of Terminations :

2

Length :

6.6mm

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

12 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

16.5nC @ 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

Fall Time (Typ) :

20 ns

Base Part Number :

STD8N

Power Dissipation :

110W

Vgs(th) (Max) @ Id :

5V @ 100µA

Lead Free :

Lead Free

Width :

6.2mm

Series :

SuperMESH5™

Pulsed Drain Current-Max (IDM) :

24A

ECCN Code :

EAR99