STD8N65M5

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Mfr.Part #
STD8N65M5
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 650V 7A DPAK
Stock
6,064
In Stock :
6,064

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Length :
6.6mm
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Terminal Form :
Gull wing
Additional Feature :
ULTRA-LOW RESISTANCE
Power Dissipation :
70W
ECCN Code :
EAR99
Drain Current-Max (Abs) (ID) :
7A
Mounting Type :
Surface Mount
REACH SVHC :
No SVHC
FET Type :
N-Channel
JESD-30 Code :
R-PSSO-G2
Drive Voltage (Max Rds On,Min Rds On) :
10V
Element Configuration :
Single
Drain to Source Breakdown Voltage :
650V
Height :
2.4mm
Time@Peak Reflow Temperature-Max (s) :
30
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
17 Weeks
Number of Terminations :
2
Rise Time :
14ns
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Transistor Element Material :
SILICON
Gate to Source Voltage (Vgs) :
25V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25°C :
7A Tc
Pin Count :
3
Vgs(th) (Max) @ Id :
5V @ 250μA
Resistance :
600mOhm
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Continuous Drain Current (ID) :
7A
Peak Reflow Temperature (Cel) :
260
Operating Mode :
ENHANCEMENT MODE
Series :
MDmesh™ V
JESD-609 Code :
e3
Turn On Delay Time :
50 ns
Fall Time (Typ) :
11 ns
Pulsed Drain Current-Max (IDM) :
28A
Input Capacitance (Ciss) (Max) @ Vds :
690pF @ 100V
Packaging :
Tape and Reel (TR)
Base Part Number :
STD8N
Vgs (Max) :
±25V
Threshold Voltage :
4V
Lead Free :
Lead Free
Power Dissipation-Max :
70W Tc
Mount :
Surface Mount
Operating Temperature :
150°C TJ
Turn-Off Delay Time :
20 ns
Terminal Finish :
Matte Tin (Sn) - annealed
Radiation Hardening :
No
Width :
6.2mm
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
600m Ω @ 3.5A, 10V
Number of Pins :
3
Datasheets
STD8N65M5
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STD8N65M5 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Base Part Number:STD8N, Operating Temperature:150°C TJ, Number of Pins:3, STD8N65M5 pinout, STD8N65M5 datasheet PDF, STD8N65M5 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STD8N65M5 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STD8N65M5


N-Channel Tape & Reel (TR) 600m Ω @ 3.5A, 10V ±25V 690pF @ 100V 15nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

STD8N65M5 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 690pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 7A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=650V. And this device has 650V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 7A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 20 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 28A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 50 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.

STD8N65M5 Features


a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 28A.
a threshold voltage of 4V


STD8N65M5 Applications


There are a lot of STMicroelectronics
STD8N65M5 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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