STD8N60DM2
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- Mfr.Part #
- STD8N60DM2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 8A DPAK
- Stock
- 1,339
- In Stock ：
- 1,339
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Rds On (Max) @ Id, Vgs :
- 600m Ω @ 4A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Vgs (Max) :
- ±30V
- Power Dissipation-Max :
- 85W Tc
- Drain to Source Voltage (Vdss) :
- 600V
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 375pF @ 100V
- Base Part Number :
- STD8N
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 13.5nC @ 10V
- Series :
- MDmesh™ DM2
- Factory Lead Time :
- 17 Weeks
- Datasheets
- STD8N60DM2
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N-Channel Tape & Reel (TR) 600m Ω @ 4A, 10V ±30V 375pF @ 100V 13.5nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
STD8N60DM2 Description
This high-voltage N-channel Power MOSFET is part of the MDmesh? DM2 fast recovery diode series. It offers a very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
STD8N60DM2 Features
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
STD8N60DM2 Applications
Switching applications
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