STD35NF06L
- Mfr.Part #
- STD35NF06L
- Manufacturer
- UTD Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TO-252 MOSFETS ROHS
- Stock
- 5,625
- In Stock :
- 5,625
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- Manufacturer :
- UTD Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 40 ns
- Length :
- 6.6mm
- REACH SVHC :
- No SVHC
- Threshold Voltage :
- 1V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1700pF @ 25V
- Avalanche Energy Rating (Eas) :
- 280 mJ
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Pin Count :
- 3
- Current Rating :
- 35A
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Power Dissipation-Max :
- 80W Tc
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Breakdown Voltage :
- 60V
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±16V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Contact Plating :
- Tin
- JESD-30 Code :
- R-PSSO-G2
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Continuous Drain Current (ID) :
- 17.5A
- Rise Time :
- 100ns
- Rds On (Max) @ Id, Vgs :
- 17m Ω @ 17.5A, 10V
- Height :
- 2.63mm
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Width :
- 6.2mm
- Max Junction Temperature (Tj) :
- 175°C
- Gate to Source Voltage (Vgs) :
- 16V
- JEDEC-95 Code :
- TO-252AA
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Base Part Number :
- STD35
- Voltage - Rated DC :
- 60V
- Number of Channels :
- 1
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 17mOhm
- Series :
- STripFET™ II
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 20 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Turn On Delay Time :
- 20 ns
- Power Dissipation :
- 80W
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 4.5V
- Datasheets
- STD35NF06L
N-Channel Tape & Reel (TR) 17m Ω @ 17.5A, 10V ±16V 1700pF @ 25V 33nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
The STD35NF06LT4 is a 60V N-channel Power MOSFET developed using unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the MOSFET suitable for use as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer applications and applications with low gate charge driving requirements.
STD35NF06LT4 Features
Low threshold drive
Gate charge minimized
High peak power
High ruggedness capability
STD35NF06LT4 Applications
Industrial
Communications & Networking,
Computers & Computer Peripherals
Automotive
Switching application
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