STD1NK80ZT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

3.75V

Width :

6.2mm

Vgs (Max) :

±30V

Drain to Source Breakdown Voltage :

800V

Avalanche Energy Rating (Eas) :

50 mJ

Manufacturer Package Identifier :

TO-252-P032P

Terminal Finish :

Matte Tin (Sn) - annealed

Power Dissipation-Max :

45W Tc

Base Part Number :

STD1NK

Fall Time (Typ) :

55 ns

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

12 Weeks

JEDEC-95 Code :

TO-252AA

Height :

2.4mm

Resistance :

16Ohm

RoHS Status :

ROHS3 Compliant

Max Junction Temperature (Tj) :

150°C

Continuous Drain Current (ID) :

1A

Number of Channels :

1

Pulsed Drain Current-Max (IDM) :

5A

Transistor Element Material :

SILICON

Turn On Delay Time :

8 ns

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

7.7nC @ 10V

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain Current-Max (Abs) (ID) :

1A

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

22 ns

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

16 Ω @ 500mA, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Series :

SuperMESH™

Voltage - Rated DC :

800V

Packaging :

Tape and Reel (TR)

Current Rating :

1A

Length :

6.6mm

Input Capacitance (Ciss) (Max) @ Vds :

160pF @ 25V

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Lead Free :

Lead Free

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

1A Tc

Number of Terminations :

2

Mount :

Surface Mount

ECCN Code :

EAR99

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Rise Time :

30ns

Power Dissipation :

45W