STD1NK80Z-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

22 ns

Packaging :

Tube

Base Part Number :

STD1NK

Avalanche Energy Rating (Eas) :

50 mJ

Contact Plating :

Tin

Pin Count :

3

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Series :

SuperMESH™

Drain Current-Max (Abs) (ID) :

1A

Turn On Delay Time :

8 ns

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Continuous Drain Current (ID) :

1A

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

30ns

Gate Charge (Qg) (Max) @ Vgs :

7.7nC @ 10V

Number of Elements :

1

Radiation Hardening :

No

Transistor Element Material :

SILICON

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

160pF @ 25V

Rds On (Max) @ Id, Vgs :

16 Ω @ 500mA, 10V

FET Type :

N-Channel

Vgs (Max) :

±30V

Drain to Source Breakdown Voltage :

800V

Mount :

Through Hole

ECCN Code :

EAR99

Lead Free :

Lead Free

Power Dissipation :

45W

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

45W Tc

Pulsed Drain Current-Max (IDM) :

5A

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

1A Tc

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

3

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

55 ns