STD1NK60T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rise Time :

5ns

Mount :

Surface Mount

Number of Channels :

1

Voltage - Rated DC :

600V

Number of Terminations :

2

Power Dissipation-Max :

30W Tc

Vgs(th) (Max) @ Id :

3.7V @ 250μA

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

8.5 Ω @ 500mA, 10V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Lead Free :

Lead Free

Base Part Number :

STD1NK

Radiation Hardening :

No

REACH SVHC :

No SVHC

Power Dissipation :

30W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Resistance :

8.5Ohm

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

19 ns

Fall Time (Typ) :

25 ns

Number of Pins :

3

Height :

2.63mm

Number of Elements :

1

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

156pF @ 25V

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

1A Tc

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

3V

Pin Count :

3

JEDEC-95 Code :

TO-252AA

Manufacturer Package Identifier :

TO-252-P032P

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

12 Weeks

Element Configuration :

Single

Turn On Delay Time :

6.5 ns

Series :

SuperMESH™

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

1A

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Max Junction Temperature (Tj) :

150°C

Transistor Element Material :

SILICON

Width :

6.2mm

Pulsed Drain Current-Max (IDM) :

4A

Drain to Source Breakdown Voltage :

600V

Current Rating :

1A

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Continuous Drain Current (ID) :

1A

Terminal Finish :

Matte Tin (Sn) - annealed

Length :

6.6mm

Avalanche Energy Rating (Eas) :

25 mJ