STD1NK60-1

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Mfr.Part #
STD1NK60-1
Manufacturer
STMicroelectronics
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 600V 1A IPAK
Stock
7,251
In Stock :
7,251

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Width :
6.2mm
Pulsed Drain Current-Max (IDM) :
4A
Transistor Element Material :
SILICON
Power Dissipation :
30W
Transistor Application :
SWITCHING
FET Type :
N-Channel
Element Configuration :
Single
Height :
2.4mm
Drain Current-Max (Abs) (ID) :
1A
Avalanche Energy Rating (Eas) :
25 mJ
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
3.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds :
156pF @ 25V
Gate to Source Voltage (Vgs) :
30V
Peak Reflow Temperature (Cel) :
260
Vgs (Max) :
±30V
Series :
SuperMESH™
Turn On Delay Time :
6.5 ns
Packaging :
Tube
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Contact Plating :
Tin
Factory Lead Time :
12 Weeks
JESD-609 Code :
e3
Length :
6.6mm
Lead Free :
Lead Free
Number of Terminations :
3
Threshold Voltage :
3V
Base Part Number :
STD1NK
ECCN Code :
EAR99
Rise Time :
5ns
Mounting Type :
Through Hole
Turn-Off Delay Time :
19 ns
Radiation Hardening :
No
Number of Pins :
3
Current - Continuous Drain (Id) @ 25°C :
1A Tc
Number of Elements :
1
Power Dissipation-Max :
30W Tc
Drain to Source Breakdown Voltage :
600V
Time@Peak Reflow Temperature-Max (s) :
30
Mount :
Surface Mount, Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
1A
REACH SVHC :
No SVHC
Rds On (Max) @ Id, Vgs :
8.5 Ω @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 10V
Pin Count :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Fall Time (Typ) :
25 ns
Datasheets
STD1NK60-1
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STD1NK60-1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Number of Terminations:3, Base Part Number:STD1NK, Mounting Type:Through Hole, Number of Pins:3, STD1NK60-1 pinout, STD1NK60-1 datasheet PDF, STD1NK60-1 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STD1NK60-1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STD1NK60-1


N-Channel Tube 8.5 Ω @ 500mA, 10V ±30V 156pF @ 25V 10nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA

STD1NK60-1 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 25 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 156pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.There is no drain current on this device since the maximum continuous current it can conduct is 1A.As a result of its turn-off delay time, which is 19 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 4A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 6.5 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 3V.In addition to reducing power consumption, this device uses drive voltage (10V).

STD1NK60-1 Features


the avalanche energy rating (Eas) is 25 mJ
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 19 ns
based on its rated peak drain current 4A.
a threshold voltage of 3V


STD1NK60-1 Applications


There are a lot of STMicroelectronics
STD1NK60-1 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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