STD1HNC60T4

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Mfr.Part #
STD1HNC60T4
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 600V 2A DPAK
Stock
35,588
In Stock :
35,588

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
5 Ω @ 1A, 10V
FET Type :
N-Channel
Power Dissipation-Max :
50W Tc
Current - Continuous Drain (Id) @ 25°C :
2A Tc
Current Rating :
2A
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
4V @ 250µA
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number :
STD1HN
RoHS Status :
Non-RoHS Compliant
Radiation Hardening :
No
Mount :
Surface Mount
Rise Time :
8.5ns
Gate Charge (Qg) (Max) @ Vgs :
15.5nC @ 10V
Mounting Type :
Surface Mount
Packaging :
Tape and Reel (TR)
Voltage - Rated DC :
600V
Number of Pins :
3
Continuous Drain Current (ID) :
2A
Operating Temperature :
150°C TJ
Gate to Source Voltage (Vgs) :
30V
Turn On Delay Time :
9 ns
Input Capacitance (Ciss) (Max) @ Vds :
228pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Fall Time (Typ) :
9 ns
Series :
PowerMESH™ II
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
STD1HNC60T4
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STD1HNC60T4 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Base Part Number:STD1HN, Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:150°C TJ, STD1HNC60T4 pinout, STD1HNC60T4 datasheet PDF, STD1HNC60T4 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STD1HNC60T4 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STD1HNC60T4


N-Channel Tape & Reel (TR) 5 Ω @ 1A, 10V ±30V 228pF @ 25V 15.5nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

STD1HNC60T4 Overview


A device's maximum input capacitance is 228pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.

STD1HNC60T4 Features


a continuous drain current (ID) of 2A


STD1HNC60T4 Applications


There are a lot of STMicroelectronics
STD1HNC60T4 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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