STD18N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

60A

Transistor Application :

SWITCHING

Contact Plating :

Tin

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Number of Terminations :

2

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±25V

ECCN Code :

EAR99

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins :

3

Turn On Delay Time :

36 ns

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

15A

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

15A Tc

JESD-30 Code :

R-PSSO-G2

Lead Free :

Lead Free

Width :

6.2mm

Series :

MDmesh™ V

Resistance :

220mOhm

Base Part Number :

STD18

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Element Configuration :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

650V

Power Dissipation-Max :

110W Tc

Turn-Off Delay Time :

9 ns

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

220m Ω @ 7.5A, 10V

Length :

6.6mm

Factory Lead Time :

17 Weeks

Height :

2.4mm

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

7ns

Power Dissipation :

110W

FET Type :

N-Channel

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

9 ns

Gate to Source Voltage (Vgs) :

25V

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1240pF @ 100V