STD18N65M2-EP
- Mfr.Part #
- STD18N65M2-EP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 11A DPAK
- Stock
- 17,379
- In Stock :
- 17,379
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- -
- Supporting protocol for PROFIsafe :
- No
- Height :
- 0.088
- Number of free ISA-slots :
- 0
- Radio standard Wi-Fi 802.11 :
- No
- Supplier Device Package :
- D-PAK (TO-252)
- Gate Charge (Qg) (Max) @ Vgs :
- 14.4 nC @ 10 V
- Max. main memory :
- 32000000000
- Supporting protocol for MODBUS :
- No
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Front built-in possible :
- No
- Number of HW-interfaces Wireless :
- 0
- Input Capacitance (Ciss) (Max) @ Vds :
- 700 pF @ 100 V
- Supporting protocol for PROFINET CBA :
- No
- Package :
- Tape and Reel (TR)
- Number of free AGP-slots :
- 0
- Mounting Type :
- Surface Mount
- Radio standard GPRS :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 11A (Tc)
- With floppy disc drive :
- No
- Supporting protocol for ASI :
- No
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- FET Type :
- N-Channel
- Supporting protocol for LON :
- No
- Supporting protocol for SERCOS :
- No
- Supporting protocol for Foundation Fieldbus :
- No
- Supporting protocol for Data-Highway :
- No
- Technology :
- MOSFET (Metal Oxide)
- Depth :
- 0.444
- Series :
- -
- Supporting protocol for DeviceNet :
- No
- Width :
- 0.43
- Radio standard Bluetooth :
- No
- Product Status :
- Obsolete
- Supporting protocol for AS-Interface Safety at Work :
- No
- IO link master :
- No
- Number of HW-interfaces serial TTY :
- 0
- Vgs (Max) :
- ±25V
- Supporting protocol for KNX :
- No
- Supporting protocol for SUCONET :
- No
- Number of free PCMCIA-slots :
- 0
- Supporting protocol for INTERBUS-Safety :
- No
- Supporting protocol for INTERBUS :
- No
- Power Dissipation (Max) :
- 110W (Tc)
- Supporting protocol for CAN :
- No
- Supporting protocol for DeviceNet Safety :
- No
- Radio standard UMTS :
- No
- Suitable for safety functions :
- No
- Supporting protocol for SafetyBUS p :
- No
- Drain to Source Voltage (Vdss) :
- 650 V
- Radio standard GSM :
- No
- Rds On (Max) @ Id, Vgs :
- 375mOhm @ 5.5A, 10V
- Datasheets
- STD18N65M2-EP

MOSFET (Metal Oxide) N-Channel 375mOhm @ 5.5A, 10V ±25V 700 pF @ 100 V 14.4 nC @ 10 V 650 V TO-252-3, DPak (2 Leads + Tab), SC-63
STD18N65M2-EP Overview
The maximum input capacitance of this device is 700 pF @ 100 V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 650 V in order to operate.
STD18N65M2-EP Features
a 650 V drain to source voltage (Vdss)
STD18N65M2-EP Applications
There are a lot of STMicroelectronics
STD18N65M2-EP applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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