STD15NF10T4

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Mfr.Part #
STD15NF10T4
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 100V 23A DPAK
Stock
26,165
In Stock :
26,165

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
4V @ 250µA
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
23A Tc
Rise Time :
45ns
Drain to Source Breakdown Voltage :
100V
Number of Terminations :
2
Radiation Hardening :
No
Rds On (Max) @ Id, Vgs :
65m Ω @ 12A, 10V
Number of Channels :
1
Voltage - Rated DC :
100V
Transistor Application :
SWITCHING
Pin Count :
3
Case Connection :
DRAIN
Lead Free :
Lead Free
Turn-Off Delay Time :
49 ns
Number of Elements :
1
Vgs (Max) :
±20V
Max Junction Temperature (Tj) :
175°C
Avalanche Energy Rating (Eas) :
75 mJ
Time@Peak Reflow Temperature-Max (s) :
30
Transistor Element Material :
SILICON
Element Configuration :
Single
Mount :
Surface Mount
Threshold Voltage :
3V
Weight :
4.535924g
Packaging :
Tape and Reel (TR)
ECCN Code :
EAR99
Drive Voltage (Max Rds On,Min Rds On) :
10V
REACH SVHC :
No SVHC
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current Rating :
23A
Turn On Delay Time :
60 ns
Series :
STripFET™ II
Terminal Finish :
Matte Tin (Sn) - annealed
Input Capacitance (Ciss) (Max) @ Vds :
870pF @ 25V
Power Dissipation-Max :
70W Tc
Resistance :
65mOhm
Width :
6.2mm
Base Part Number :
STD15
Mounting Type :
Surface Mount
Peak Reflow Temperature (Cel) :
260
Power Dissipation :
70W
JESD-30 Code :
R-PSSO-G2
Operating Mode :
ENHANCEMENT MODE
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Pulsed Drain Current-Max (IDM) :
60A
Manufacturer Package Identifier :
DPAK_0068772
Number of Pins :
3
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Operating Temperature :
-55°C~175°C TJ
Terminal Form :
Gull wing
JESD-609 Code :
e3
Length :
6.6mm
Height :
2.4mm
Fall Time (Typ) :
17 ns
RoHS Status :
ROHS3 Compliant
Gate to Source Voltage (Vgs) :
20V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Continuous Drain Current (ID) :
23A
Datasheets
STD15NF10T4
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STD15NF10T4 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Number of Channels:1, Base Part Number:STD15, Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, STD15NF10T4 pinout, STD15NF10T4 datasheet PDF, STD15NF10T4 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STD15NF10T4 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STD15NF10T4


N-Channel Tape & Reel (TR) 65m Ω @ 12A, 10V ±20V 870pF @ 25V 40nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

STD15NF10T4 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 75 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 870pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 23A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 49 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 60 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.

STD15NF10T4 Features


the avalanche energy rating (Eas) is 75 mJ
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 49 ns
based on its rated peak drain current 60A.
a threshold voltage of 3V


STD15NF10T4 Applications


There are a lot of STMicroelectronics
STD15NF10T4 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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