STD15NF10T4
- Mfr.Part #
- STD15NF10T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 23A DPAK
- Stock
- 26,165
- In Stock :
- 26,165
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 23A Tc
- Rise Time :
- 45ns
- Drain to Source Breakdown Voltage :
- 100V
- Number of Terminations :
- 2
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 12A, 10V
- Number of Channels :
- 1
- Voltage - Rated DC :
- 100V
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Case Connection :
- DRAIN
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 49 ns
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Max Junction Temperature (Tj) :
- 175°C
- Avalanche Energy Rating (Eas) :
- 75 mJ
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Threshold Voltage :
- 3V
- Weight :
- 4.535924g
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 23A
- Turn On Delay Time :
- 60 ns
- Series :
- STripFET™ II
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Input Capacitance (Ciss) (Max) @ Vds :
- 870pF @ 25V
- Power Dissipation-Max :
- 70W Tc
- Resistance :
- 65mOhm
- Width :
- 6.2mm
- Base Part Number :
- STD15
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 70W
- JESD-30 Code :
- R-PSSO-G2
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Pulsed Drain Current-Max (IDM) :
- 60A
- Manufacturer Package Identifier :
- DPAK_0068772
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Length :
- 6.6mm
- Height :
- 2.4mm
- Fall Time (Typ) :
- 17 ns
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Continuous Drain Current (ID) :
- 23A
- Datasheets
- STD15NF10T4
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N-Channel Tape & Reel (TR) 65m Ω @ 12A, 10V ±20V 870pF @ 25V 40nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD15NF10T4 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 75 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 870pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 23A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 49 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 60 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.
STD15NF10T4 Features
the avalanche energy rating (Eas) is 75 mJ
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 49 ns
based on its rated peak drain current 60A.
a threshold voltage of 3V
STD15NF10T4 Applications
There are a lot of STMicroelectronics
STD15NF10T4 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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