STD150N3LLH6
- Mfr.Part #
- STD150N3LLH6
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 80A DPAK
- Stock
- 6,047
- In Stock :
- 6,047
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Series :
- DeepGATE™, STripFET™ VI
- Power Dissipation-Max :
- 110W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 46 ns
- Nominal Vgs :
- 2.5 V
- Base Part Number :
- STD15
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3700pF @ 25V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Width :
- 6.2mm
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Power Dissipation :
- 110W
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 525 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 4.5V
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 2.8m Ω @ 40A, 10V
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Pin Count :
- 3
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- 260
- Rise Time :
- 18ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 17 ns
- Operating Temperature :
- 175°C TJ
- Turn-Off Delay Time :
- 75 ns
- Resistance :
- 2.8MOhm
- Drain to Source Breakdown Voltage :
- 30V
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 80A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Height :
- 2.4mm
- JESD-30 Code :
- R-PSSO-G2
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Length :
- 6.6mm
- Datasheets
- STD150N3LLH6
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N-Channel Tape & Reel (TR) 2.8m Ω @ 40A, 10V ±20V 3700pF @ 25V 29nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
STD150N3LLH6 Description
STD150N3LLH6 is a 30v N-channel STripFET? VI DeepGATE? Power MOSFET. This product utilizes the 6th generation of design rules of ST’s proprietary STripFET? technology, with a new gate structure. The resulting Power MOSFET STD150N3LLH6 exhibits the lowest RDS(on) in all packages. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor STD150N3LLH6 is in the TO-252-3 package with 110mW power dissipation.
STD150N3LLH6 Features
-
RDS(on) Qg industry benchmark
-
Extremely low on-resistance RDS(on)
-
High avalanche ruggedness
-
Low gate drive power losses
STD150N3LLH6 Applications
-
Rotary Switch
-
DIP Switch
-
Limit Switch
-
Reed Switch
-
Rocker Switch
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