STD14NM50NAG

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Mfr.Part #
STD14NM50NAG
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 500V 12A DPAK
Stock
2,500
In Stock :
2,500

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
150°C TJ
Packaging :
Tape and Reel (TR)
Pulsed Drain Current-Max (IDM) :
48A
Base Part Number :
STD14
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Rds On (Max) @ Id, Vgs :
320m Ω @ 6A, 10V
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Series :
Automotive, AEC-Q101, MDmesh™ II
Operating Mode :
ENHANCEMENT MODE
Drain Current-Max (Abs) (ID) :
12A
Power Dissipation-Max :
90W
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-source On Resistance-Max :
0.32Ohm
Surface Mount :
yes
Terminal Form :
Gull wing
Factory Lead Time :
16 Weeks
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Input Capacitance (Ciss) (Max) @ Vds :
816pF @ 50V
DS Breakdown Voltage-Min :
500V
JESD-30 Code :
R-PSSO-G2
Gate Charge (Qg) (Max) @ Vgs :
27nC @ 10V
Number of Elements :
1
Case Connection :
DRAIN
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Position :
Single
Vgs(th) (Max) @ Id :
4V @ 250µA
Number of Terminations :
2
Mounting Type :
Surface Mount
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
500V
Vgs (Max) :
±25V
Transistor Element Material :
SILICON
Avalanche Energy Rating (Eas) :
172 mJ
Datasheets
STD14NM50NAG
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STD14NM50NAG from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Base Part Number:STD14, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Mounting Type:Surface Mount, STD14NM50NAG pinout, STD14NM50NAG datasheet PDF, STD14NM50NAG amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STD14NM50NAG ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STD14NM50NAG


N-Channel Tape & Reel (TR) 320m Ω @ 6A, 10V ±25V 816pF @ 50V 27nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63

STD14NM50NAG Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 172 mJ.The maximum input capacitance of this device is 816pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 12A.There is no pulsed drain current maximum for this device based on its rated peak drain current 48A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

STD14NM50NAG Features


the avalanche energy rating (Eas) is 172 mJ
based on its rated peak drain current 48A.
a 500V drain to source voltage (Vdss)


STD14NM50NAG Applications


There are a lot of STMicroelectronics
STD14NM50NAG applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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