STD13NM60ND
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- Mfr.Part #
- STD13NM60ND
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 11A DPAK
- Stock
- 4,812
- In Stock ：
- 4,812
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 6.6mm
- Drain to Source Breakdown Voltage :
- 650V
- Base Part Number :
- STD13
- Gate to Source Voltage (Vgs) :
- 25V
- Packaging :
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs :
- 24.5nC @ 10V
- Transistor Element Material :
- SILICON
- Series :
- FDmesh™ II
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 11A
- Element Configuration :
- Single
- Turn On Delay Time :
- 46.5 ns
- FET Type :
- N-Channel
- Height :
- 2.4mm
- Resistance :
- 380mOhm
- Pulsed Drain Current-Max (IDM) :
- 44A
- Number of Terminations :
- 2
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 845pF @ 50V
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Vgs (Max) :
- ±25V
- Drain to Source Voltage (Vdss) :
- 600V
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 380m Ω @ 5.5A, 10V
- Lead Free :
- Lead Free
- Case Connection :
- DRAIN
- Rise Time :
- 10ns
- Width :
- 6.2mm
- Factory Lead Time :
- 16 Weeks
- Turn-Off Delay Time :
- 9.6 ns
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 15.4 ns
- Power Dissipation :
- 109W
- Power Dissipation-Max :
- 109W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Datasheets
- STD13NM60ND
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N-Channel Cut Tape (CT) 380m Ω @ 5.5A, 10V ±25V 845pF @ 50V 24.5nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
STD13NM60ND Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 845pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 11A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 650V, and this device has a drainage-to-source breakdown voltage of 650VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 9.6 ns.Peak drain current is 44A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 46.5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 25V to 1.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STD13NM60ND Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 9.6 ns
based on its rated peak drain current 44A.
a 600V drain to source voltage (Vdss)
STD13NM60ND Applications
There are a lot of STMicroelectronics
STD13NM60ND applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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