STD13NM60N
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- Mfr.Part #
- STD13NM60N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 11A DPAK
- Stock
- 1,225
- In Stock ：
- 1,225
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 15.4 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Turn On Delay Time :
- 46.5 ns
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±25V
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 380m Ω @ 5.5A, 10V
- Height :
- 2.4mm
- Number of Pins :
- 3
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 9.6 ns
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 2
- Case Connection :
- DRAIN
- Base Part Number :
- STD13
- FET Type :
- N-Channel
- Series :
- FDmesh™ II
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 109W Tc
- Radiation Hardening :
- No
- Power Dissipation :
- 109W
- Length :
- 6.6mm
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 650V
- Resistance :
- 380mOhm
- Continuous Drain Current (ID) :
- 11A
- Packaging :
- Cut Tape (CT)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 845pF @ 50V
- Terminal Form :
- Gull wing
- Rise Time :
- 10ns
- Drain to Source Voltage (Vdss) :
- 600V
- Width :
- 6.2mm
- Lead Free :
- Lead Free
- Pulsed Drain Current-Max (IDM) :
- 44A
- Gate to Source Voltage (Vgs) :
- 25V
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 16 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 24.5nC @ 10V
- Datasheets
- STD13NM60N
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N-Channel Cut Tape (CT) 380m Ω @ 5.5A, 10V ±25V 845pF @ 50V 24.5nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
STD13NM60ND Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 845pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 11A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 650V, and this device has a drainage-to-source breakdown voltage of 650VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 9.6 ns.Peak drain current is 44A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 46.5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 25V to 1.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STD13NM60ND Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 9.6 ns
based on its rated peak drain current 44A.
a 600V drain to source voltage (Vdss)
STD13NM60ND Applications
There are a lot of STMicroelectronics
STD13NM60ND applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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