STD13N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Mount :

Surface Mount

Turn On Delay Time :

11 ns

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rise Time :

10ns

Pulsed Drain Current-Max (IDM) :

44A

Gate to Source Voltage (Vgs) :

25V

Width :

6.2mm

Number of Terminations :

2

Lead Free :

Lead Free

Case Connection :

DRAIN

Length :

6.6mm

Resistance :

380mOhm

Turn-Off Delay Time :

41 ns

Transistor Element Material :

SILICON

Factory Lead Time :

16 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.5A, 10V

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

2.4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Drain to Source Voltage (Vdss) :

600V

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

650V

Number of Pins :

2

Base Part Number :

STD13

Input Capacitance (Ciss) (Max) @ Vds :

580pF @ 100V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Power Dissipation :

110W

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Fall Time (Typ) :

9.5 ns

Series :

MDmesh™ II Plus

Vgs (Max) :

±25V

Packaging :

Cut Tape (CT)

Continuous Drain Current (ID) :

11A

Power Dissipation-Max :

110W Tc