STD12NM50ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation :

100W

Operating Temperature :

150°C TJ

Gate to Source Voltage (Vgs) :

25V

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N-Channel

Rise Time :

15ns

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

STD12

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

17 ns

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Turn-Off Delay Time :

40 ns

Continuous Drain Current (ID) :

11A

Case Connection :

DRAIN

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

11A Tc

DS Breakdown Voltage-Min :

500V

Lead Free :

Lead Free

Power Dissipation-Max :

100W Tc

Drain to Source Voltage (Vdss) :

500V

Transistor Element Material :

SILICON

Number of Terminations :

2

Configuration :

Single

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

44A

Mounting Type :

Surface Mount

Series :

FDmesh™ II

Number of Pins :

3

JEDEC-95 Code :

TO-252AA

Vgs(th) (Max) @ Id :

5V @ 250μA

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn) - annealed

JESD-609 Code :

e3

Turn On Delay Time :

12 ns

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±25V

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.5A, 10V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Pin Count :

3