STD12NF06LT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Lead Free :

Lead Free

Voltage - Rated DC :

60V

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

30

Width :

6.2mm

Current Rating :

12A

Threshold Voltage :

3V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Number of Pins :

3

Drain to Source Breakdown Voltage :

60V

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 5V

Length :

6.6mm

Turn On Delay Time :

10 ns

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

13 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Radiation Hardening :

No

Transistor Application :

SWITCHING

Pin Count :

3

Vgs(th) (Max) @ Id :

2V @ 250μA

Weight :

4.535924g

Vgs (Max) :

±16V

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Continuous Drain Current (ID) :

12A

Turn-Off Delay Time :

20 ns

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Dual Supply Voltage :

60V

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Termination :

SMD/SMT

ECCN Code :

EAR99

Series :

STripFET™ II

Peak Reflow Temperature (Cel) :

260

Height :

2.4mm

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

16V

Base Part Number :

STD12

Nominal Vgs :

2 V

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

42.8W Tc

Rds On (Max) @ Id, Vgs :

100m Ω @ 6A, 10V

Resistance :

100MOhm

Rise Time :

35ns

Power Dissipation :

30W

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

48A