STD12N65M5
- Mfr.Part #
- STD12N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 8.5A DPAK
- Stock
- 26,529
- In Stock :
- 26,529
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 22.6 ns
- Base Part Number :
- STD12
- Current - Continuous Drain (Id) @ 25°C :
- 8.5A Tc
- Gate to Source Voltage (Vgs) :
- 25V
- Peak Reflow Temperature (Cel) :
- 260
- JESD-30 Code :
- R-PSSO-G2
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 430m Ω @ 4.3A, 10V
- Element Configuration :
- Single
- Power Dissipation :
- 70W
- FET Type :
- N-Channel
- Width :
- 6.2mm
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 8.5A
- Vgs (Max) :
- ±25V
- Series :
- MDmesh™ V
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Fall Time (Typ) :
- 24 ns
- Rise Time :
- 9.5ns
- Operating Temperature :
- 150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 900pF @ 100V
- Drain to Source Breakdown Voltage :
- 650V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 70W Tc
- Threshold Voltage :
- 4V
- Resistance :
- 430mOhm
- Turn-Off Delay Time :
- 15.6 ns
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Length :
- 6.6mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Height :
- 2.4mm
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Packaging :
- Cut Tape (CT)
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- STD12N65M5
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N-Channel Cut Tape (CT) 430m Ω @ 4.3A, 10V ±25V 900pF @ 100V 22nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD12N65M5 Description
The STD12N65M5 is an N-channel Power MOSFET that has been developed using the MDmesh M5 innovative vertical process design and the well-known PowerMESH horizontal design. Its extremely low on-resistance makes it particularly suitable for applications that require high power and high efficiency.
STD12N65M5 Features
-
Excellent switching performance
-
Easy to drive
-
100% avalanche tested
-
Worldwide best RDS(on) * area
-
Higher VDSS rating and high dv/dt capability
STD12N65M5 Applications
-
Switching applications
-
Relay Drivers
-
Stepper and DC Brushed Motor Drivers
-
Lamp Drivers
-
Line Drivers
-
Display Drivers (LED and Gas Discharge)
-
Logic Buffers
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