STD12N65M2
- Mfr.Part #
- STD12N65M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 8A DPAK
- Stock
- 5,225
- In Stock :
- 5,225
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Element Configuration :
- Single
- Width :
- 6.2mm
- Packaging :
- Cut Tape (CT)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Turn-Off Delay Time :
- 34 ns
- Height :
- 2.4mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Drain to Source Voltage (Vdss) :
- 650V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 85W Tc
- Length :
- 6.6mm
- Rds On (Max) @ Id, Vgs :
- 500m Ω @ 4A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 535pF @ 100V
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 8A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 16.5nC @ 10V
- Series :
- MDmesh™ M2
- Mount :
- Surface Mount
- Turn On Delay Time :
- 9 ns
- Drain Current-Max (Abs) (ID) :
- 8A
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±25V
- Factory Lead Time :
- 16 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Part Number :
- STD12
- Gate to Source Voltage (Vgs) :
- 25V
- Datasheets
- STD12N65M2
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N-Channel Cut Tape (CT) 500m Ω @ 4A, 10V ±25V 535pF @ 100V 16.5nC @ 10V 650V TO-252-3, DPak (2 Leads + Tab), SC-63
STD12N65M2 Description
MDmeshTM M2 technology was used to produce the STD12N65M2 N-channel Power MOSFET. STD12N65M2 has low on-resistance and optimal switching characteristics thanks to its strip layout and improved vertical structure, making it suited for the most demanding high efficiency converters.
STD12N65M2 Features
-
Gate charge is really low.
-
The output capacitance profile (COSS) is excellent.
-
Avalanche-proofed to the nth degree
-
Zener-protected
STD12N65M2 Applications
Industrial Applications
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