STD12N65M2

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Mfr.Part #
STD12N65M2
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 650V 8A DPAK
Stock
5,225
In Stock :
5,225

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
8A Tc
Element Configuration :
Single
Width :
6.2mm
Packaging :
Cut Tape (CT)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Turn-Off Delay Time :
34 ns
Height :
2.4mm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Lead Free :
Lead Free
Drain to Source Voltage (Vdss) :
650V
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Operating Temperature :
-55°C~150°C TJ
ECCN Code :
EAR99
Power Dissipation-Max :
85W Tc
Length :
6.6mm
Rds On (Max) @ Id, Vgs :
500m Ω @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
535pF @ 100V
Mounting Type :
Surface Mount
Number of Pins :
3
Continuous Drain Current (ID) :
8A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
16.5nC @ 10V
Series :
MDmesh™ M2
Mount :
Surface Mount
Turn On Delay Time :
9 ns
Drain Current-Max (Abs) (ID) :
8A
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±25V
Factory Lead Time :
16 Weeks
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Base Part Number :
STD12
Gate to Source Voltage (Vgs) :
25V
Datasheets
STD12N65M2
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STD12N65M2 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:3, Base Part Number:STD12, STD12N65M2 pinout, STD12N65M2 datasheet PDF, STD12N65M2 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STD12N65M2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STD12N65M2


N-Channel Cut Tape (CT) 500m Ω @ 4A, 10V ±25V 535pF @ 100V 16.5nC @ 10V 650V TO-252-3, DPak (2 Leads + Tab), SC-63

STD12N65M2 Description


MDmeshTM M2 technology was used to produce the STD12N65M2 N-channel Power MOSFET. STD12N65M2 has low on-resistance and optimal switching characteristics thanks to its strip layout and improved vertical structure, making it suited for the most demanding high efficiency converters.



STD12N65M2 Features


  • Gate charge is really low.

  • The output capacitance profile (COSS) is excellent.

  • Avalanche-proofed to the nth degree

  • Zener-protected



STD12N65M2 Applications


Industrial Applications


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