STD12N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

538pF @ 100V

Vgs (Max) :

±25V

Avalanche Energy Rating (Eas) :

117 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

36A

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Terminal Position :

Single

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

16 Weeks

Packaging :

Cut Tape (CT)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

DS Breakdown Voltage-Min :

600V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Case Connection :

DRAIN

Series :

MDmesh™ M2

Drain Current-Max (Abs) (ID) :

9A

Base Part Number :

STD12

Rds On (Max) @ Id, Vgs :

450m Ω @ 4.5A, 10V

Terminal Form :

THROUGH-HOLE

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

150°C TJ

Drain to Source Voltage (Vdss) :

600V

Mounting Type :

Surface Mount

Surface Mount :

yes

Drain-source On Resistance-Max :

0.45Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

85W Tc

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON