STD120N4LF6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Turn-Off Delay Time :

125 ns

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

260

Length :

6.6mm

ECCN Code :

EAR99

Base Part Number :

STD12

Width :

6.2mm

Series :

Automotive, AEC-Q101, DeepGATE™, STripFET™ VI

Rise Time :

95ns

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

40V

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

Fall Time (Typ) :

45 ns

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn) - annealed

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Height :

2.4mm

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Mount :

Surface Mount

Power Dissipation :

110W

Vgs (Max) :

±20V

Power Dissipation-Max :

110W Tc

Number of Elements :

1

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

4300pF @ 25V

Vgs(th) (Max) @ Id :

3V @ 250µA

Element Configuration :

Single

Resistance :

4mOhm

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

80A

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Rds On (Max) @ Id, Vgs :

4m Ω @ 40A, 10V

JESD-609 Code :

e3

Turn On Delay Time :

15 ns

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Threshold Voltage :

1V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Radiation Hardening :

No