STD120N4F6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

110W Tc

Turn On Delay Time :

20 ns

Case Connection :

DRAIN

Base Part Number :

STD12

Turn-Off Delay Time :

40 ns

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

4m Ω @ 40A, 10V

Resistance :

4mOhm

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Lead Free :

Lead Free

Mount :

Surface Mount

FET Type :

N-Channel

Fall Time (Typ) :

20 ns

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Power Dissipation :

110W

Transistor Element Material :

SILICON

Pin Count :

3

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

40V

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn) - annealed

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Rise Time :

70ns

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Number of Pins :

3

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

3850pF @ 25V

Series :

Automotive, AEC-Q101, DeepGATE™, STripFET™ VI

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

80A