STD11NM65N
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- Mfr.Part #
- STD11NM65N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N CH 650V 11A DPAK
- Stock
- 2,894
- In Stock ：
- 2,894
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- DS Breakdown Voltage-Min :
- 650V
- Number of Terminations :
- 2
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Continuous Drain Current (ID) :
- 11A
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 147 mJ
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 800pF @ 50V
- FET Type :
- N-Channel
- Series :
- MDmesh™ II
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- STD11
- Vgs (Max) :
- ±25V
- Rds On (Max) @ Id, Vgs :
- 455m Ω @ 5.5A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Pins :
- 3
- Drain-source On Resistance-Max :
- 0.455Ohm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Drain to Source Voltage (Vdss) :
- 650V
- Power Dissipation-Max :
- 110W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Factory Lead Time :
- 16 Weeks
- Pulsed Drain Current-Max (IDM) :
- 44A
- Terminal Position :
- Single
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- STD11NM65N
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N-Channel Tape & Reel (TR) 455m Ω @ 5.5A, 10V ±25V 800pF @ 50V 29nC @ 10V 650V TO-252-3, DPak (2 Leads + Tab), SC-63
STD11NM65N Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 147 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 800pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 11A amps.As far as peak drain current is concerned, its maximum pulsed current is 44A.The DS breakdown voltage should be maintained above 650V to maintain normal operation.To operate this transistor, you will need a 650V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
STD11NM65N Features
the avalanche energy rating (Eas) is 147 mJ
a continuous drain current (ID) of 11A
based on its rated peak drain current 44A.
a 650V drain to source voltage (Vdss)
STD11NM65N Applications
There are a lot of STMicroelectronics
STD11NM65N applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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