STD11NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

90W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Pulsed Drain Current-Max (IDM) :

40A

Gate to Source Voltage (Vgs) :

25V

JESD-609 Code :

e3

Vgs (Max) :

±25V

REACH SVHC :

No SVHC

Number of Pins :

3

Base Part Number :

STD11

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn) - annealed

Max Junction Temperature (Tj) :

150°C

Power Dissipation :

90W

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Pin Count :

3

Rise Time :

7ns

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Avalanche Energy Rating (Eas) :

200 mJ

Fall Time (Typ) :

9 ns

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Turn-Off Delay Time :

50 ns

Series :

FDmesh™ II

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

6.2mm

Factory Lead Time :

16 Weeks

Turn On Delay Time :

16 ns

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

600V

Resistance :

450mOhm

Rds On (Max) @ Id, Vgs :

450m Ω @ 5A, 10V

Radiation Hardening :

No

Height :

2.4mm

Length :

6.6mm

JESD-30 Code :

R-PSSO-G2

Nominal Vgs :

4 V

Threshold Voltage :

3V

Operating Temperature :

150°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 50V

Continuous Drain Current (ID) :

10A

Mounting Type :

Surface Mount

Element Configuration :

Single

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99