STD11NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

7ns

Gate to Source Voltage (Vgs) :

25V

Element Configuration :

Single

Number of Pins :

3

Base Part Number :

STD11

Turn On Delay Time :

16 ns

Terminal Form :

Gull wing

Threshold Voltage :

3V

Factory Lead Time :

16 Weeks

Turn-Off Delay Time :

50 ns

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C TJ

Lead Free :

Lead Free

Number of Channels :

1

Drain to Source Breakdown Voltage :

600V

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn) - annealed

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

10A

Power Dissipation-Max :

90W Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Fall Time (Typ) :

9 ns

Pulsed Drain Current-Max (IDM) :

40A

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Vgs (Max) :

±25V

Avalanche Energy Rating (Eas) :

200 mJ

Transistor Application :

SWITCHING

Height :

2.4mm

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Rds On (Max) @ Id, Vgs :

450m Ω @ 5A, 10V

Width :

6.2mm

ECCN Code :

EAR99

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 50V

Power Dissipation :

90W

Series :

FDmesh™ II

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Length :

6.6mm

Max Junction Temperature (Tj) :

150°C

Mount :

Surface Mount

Resistance :

450mOhm

Number of Elements :

1

Nominal Vgs :

4 V