STD11NM60N-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Through Hole

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

10A

Qualification Status :

Not Qualified

Fall Time (Typ) :

12 ns

Element Configuration :

Single

Number of Pins :

3

Power Dissipation :

90W

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Base Part Number :

STD11

Power Dissipation-Max :

90W Tc

Mount :

Through Hole

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

200 mJ

Drain to Source Breakdown Voltage :

600V

Gate to Source Voltage (Vgs) :

25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

50 ns

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 50V

Rds On (Max) @ Id, Vgs :

450m Ω @ 5A, 10V

Series :

MDmesh™ II

Drain-source On Resistance-Max :

0.45Ohm

Pin Count :

3

Number of Terminations :

3

Rise Time :

18.5ns

Pulsed Drain Current-Max (IDM) :

40A

Vgs (Max) :

±25V