STD11NM50N
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- Mfr.Part #
- STD11NM50N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 8.5A DPAK
- Stock
- 12,721
- In Stock ：
- 12,721
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 8.5A Tc
- Packaging :
- Cut Tape (CT)
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-G2
- Width :
- 6.2mm
- Turn On Delay Time :
- 8 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 547pF @ 50V
- RoHS Status :
- ROHS3 Compliant
- Threshold Voltage :
- 3V
- Number of Pins :
- 3
- Factory Lead Time :
- 16 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 10ns
- Mounting Type :
- Surface Mount
- Length :
- 6.6mm
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Fall Time (Typ) :
- 10 ns
- Turn-Off Delay Time :
- 33 ns
- Series :
- MDmesh™ II
- Terminal Form :
- Gull wing
- Height :
- 2.4mm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±25V
- Resistance :
- 470mOhm
- Drain to Source Breakdown Voltage :
- 500V
- Radiation Hardening :
- No
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Gate to Source Voltage (Vgs) :
- 25V
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 70W Tc
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 70W
- Rds On (Max) @ Id, Vgs :
- 470m Ω @ 4.5A, 10V
- Continuous Drain Current (ID) :
- 8.5A
- REACH SVHC :
- No SVHC
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 9A
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Base Part Number :
- STD11
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- Datasheets
- STD11NM50N
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N-Channel Cut Tape (CT) 470m Ω @ 4.5A, 10V ±25V 547pF @ 50V 19nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD11NM50N Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 547pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.There is no drain current on this device since the maximum continuous current it can conduct is 9A.As a result of its turn-off delay time, which is 33 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 3V.In addition to reducing power consumption, this device uses drive voltage (10V).
STD11NM50N Features
a continuous drain current (ID) of 8.5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 33 ns
a threshold voltage of 3V
STD11NM50N Applications
There are a lot of STMicroelectronics
STD11NM50N applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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