STD11N65M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

3.949996g

Rds On (Max) @ Id, Vgs :

670m Ω @ 3.5A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Continuous Drain Current (ID) :

7A

FET Type :

N-Channel

Threshold Voltage :

3V

Mounting Type :

Surface Mount

Rise Time :

7.5ns

Gate to Source Voltage (Vgs) :

25V

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

16 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

410pF @ 100V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) :

650V

Packaging :

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs :

12.5nC @ 10V

Series :

MDmesh™ II Plus

Turn-Off Delay Time :

26 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

15 ns

Vgs (Max) :

±25V

Mount :

Surface Mount

Power Dissipation-Max :

85W Tc

Turn On Delay Time :

9.5 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Base Part Number :

STD11

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

7A Tc