STD11N60DM2
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- Mfr.Part #
- STD11N60DM2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 10A DPAK
- Stock
- 6,727
- In Stock ：
- 6,727
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 420m Ω @ 5A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 16.5nC @ 10V
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 17 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 650V
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 110W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 614pF @ 100V
- Series :
- MDmesh™ DM2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Base Part Number :
- STD11
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±25V
- FET Type :
- N-Channel
- Datasheets
- STD11N60DM2
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N-Channel Tape & Reel (TR) 420m Ω @ 5A, 10V ±25V 614pF @ 100V 16.5nC @ 10V 650V TO-252-3, DPak (2 Leads + Tab), SC-63
STD11N60DM2 Description
STD11N60DM2 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes STD11N60DM2 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.
STD11N60DM2 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
STD11N60DM2 Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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