STD110NH02LT4
- Mfr.Part #
- STD110NH02LT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 24V 80A DPAK
- Stock
- 5,752
- In Stock :
- 5,752
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Drain to Source Breakdown Voltage :
- 24V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Series :
- STripFET™ III
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 80A
- Gate Charge (Qg) (Max) @ Vgs :
- 93nC @ 10V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.005ohm
- Terminal Form :
- Gull wing
- Fall Time (Typ) :
- 40 ns
- Avalanche Energy Rating (Eas) :
- 900 mJ
- Terminal Finish :
- Matte Tin (Sn)
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 2
- Power Dissipation :
- 125W
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 40A, 10V
- Voltage - Rated DC :
- 24V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Base Part Number :
- STD11
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 69 ns
- Element Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 320A
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- not_compliant
- Pbfree Code :
- yes
- Current Rating :
- 80A
- Input Capacitance (Ciss) (Max) @ Vds :
- 4450pF @ 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 224ns
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 125W Tc
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- STD110NH02LT4
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N-Channel Tape & Reel (TR) 5m Ω @ 40A, 10V ±20V 4450pF @ 15V 93nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD110NH02LT4 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 900 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4450pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 80A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 24V, and this device has a drainage-to-source breakdown voltage of 24VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 69 ns.Peak drain current is 320A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.
STD110NH02LT4 Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 69 ns
based on its rated peak drain current 320A.
STD110NH02LT4 Applications
There are a lot of STMicroelectronics
STD110NH02LT4 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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