STD10P6F6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Number of Pins :

3

Case Connection :

DRAIN

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Number of Terminations :

2

Radiation Hardening :

No

Mount :

Surface Mount

Operating Temperature :

175°C TJ

Base Part Number :

STD10

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Avalanche Energy Rating (Eas) :

80 mJ

Threshold Voltage :

-4V

Lead Free :

Lead Free

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

160m Ω @ 5A, 10V

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Power Dissipation :

35W

Turn-Off Delay Time :

16.5 ns

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 48V

REACH SVHC :

No SVHC

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 10V

Rise Time :

7ns

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

60V

Continuous Drain Current (ID) :

10A

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

40A

Power Dissipation-Max :

35W Tc

Resistance :

180mOhm

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

10A Tc

JESD-30 Code :

R-PSSO-G2

Series :

DeepGATE™, STripFET™ VI

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

10 ns

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Number of Elements :

1