STD10P10F6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

100V

Gate Charge (Qg) (Max) @ Vgs :

16.5nC @ 10V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Cut Tape (CT)

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

40A

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Mount :

Surface Mount

Number of Terminations :

2

Power Dissipation-Max :

40W Tc

JESD-30 Code :

R-PSSO-G2

Base Part Number :

STD10

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

180m Ω @ 5A, 10V

Vgs (Max) :

±20V

Series :

STripFET™ F6

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.18ohm

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

10A

Number of Elements :

1

Drain to Source Voltage (Vdss) :

100V

Operating Temperature :

175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

864pF @ 80V

Terminal Form :

Gull wing