STD10NM65N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Base Part Number :

STD10

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

650V

Operating Mode :

ENHANCEMENT MODE

Width :

6.2mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

480mOhm

Threshold Voltage :

3V

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Packaging :

Tape and Reel (TR)

JEDEC-95 Code :

TO-252AA

Rise Time :

8ns

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Radiation Hardening :

No

Turn On Delay Time :

12 ns

Terminal Form :

Gull wing

Turn-Off Delay Time :

50 ns

Fall Time (Typ) :

20 ns

Power Dissipation-Max :

90W Tc

Gate to Source Voltage (Vgs) :

25V

Pin Count :

3

Transistor Application :

SWITCHING

Vgs (Max) :

±25V

Continuous Drain Current (ID) :

9A

ECCN Code :

EAR99

Series :

MDmesh™ II

Operating Temperature :

150°C TJ

Contact Plating :

Tin

REACH SVHC :

No SVHC

Number of Elements :

1

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

480m Ω @ 4.5A, 10V

Mounting Type :

Surface Mount

Height :

2.4mm

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 50V

Drain Current-Max (Abs) (ID) :

9A

Power Dissipation :

90W

Length :

6.6mm