STD10NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 50V

Pin Count :

3

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

550m Ω @ 4A, 10V

Element Configuration :

Single

REACH SVHC :

No SVHC

JESD-30 Code :

R-PSSO-G2

Nominal Vgs :

3 V

Height :

2.4mm

Transistor Element Material :

SILICON

Power Dissipation-Max :

70W Tc

Mount :

Surface Mount

Series :

MDmesh™ II

Power Dissipation :

70W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Vgs (Max) :

±25V

Packaging :

Cut Tape (CT)

Fall Time (Typ) :

15 ns

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

600V

Threshold Voltage :

3V

Length :

6.6mm

Drain Current-Max (Abs) (ID) :

8A

Rise Time :

12ns

Turn-Off Delay Time :

32 ns

Gate to Source Voltage (Vgs) :

25V

Width :

6.2mm

Mounting Type :

Surface Mount

Turn On Delay Time :

10 ns

Terminal Finish :

Matte Tin (Sn) - annealed

Resistance :

600mOhm

Base Part Number :

STD10

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Drain Current (ID) :

10A

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Number of Terminations :

2

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

16 Weeks

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

200 mJ