STD10NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Number of Pins :

3

Height :

2.4mm

Mount :

Surface Mount

Operating Temperature :

150°C TJ

Power Dissipation :

70W

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

630m Ω @ 3.5A, 10V

Number of Terminations :

2

Mounting Type :

Surface Mount

Fall Time (Typ) :

12 ns

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

7.8 ns

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 50V

Number of Elements :

1

Continuous Drain Current (ID) :

7A

Packaging :

Tape and Reel (TR)

Resistance :

630mOhm

DS Breakdown Voltage-Min :

500V

Drain to Source Voltage (Vdss) :

500V

Power Dissipation-Max :

70W Tc

Series :

MDmesh™ II

Configuration :

SINGLE WITH BUILT-IN DIODE

Threshold Voltage :

3V

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Width :

6.2mm

Terminal Position :

Single

Terminal Finish :

Matte Tin (Sn) - annealed

Gate to Source Voltage (Vgs) :

25V

Length :

6.6mm

Vgs (Max) :

±25V

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Drain Current-Max (Abs) (ID) :

7A

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pin Count :

3

Terminal Form :

Gull wing

Base Part Number :

STD10

Turn On Delay Time :

7.8 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

28A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Rise Time :

4.4ns

Pbfree Code :

yes

Lead Free :

Lead Free