STD10NF30

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

780pF @ 25V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

40A

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

175 mJ

DS Breakdown Voltage-Min :

300V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Power Dissipation-Max :

103W Tc

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

330m Ω @ 5A, 10V

Number of Terminations :

2

Number of Elements :

1

Drain-source On Resistance-Max :

0.33Ohm

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Terminal Position :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

300V

Surface Mount :

yes

Terminal Form :

Gull wing

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

10A

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

Automotive, AEC-Q101, MESH OVERLAY™, MESH OVERLAY™

Factory Lead Time :

12 Weeks

Base Part Number :

STD10

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)