STD10NF10T4
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- Mfr.Part #
- STD10NF10T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 13A DPAK
- Stock
- 11,509
- In Stock ：
- 11,509
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- * Quantity:
- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Length :
- 6.6mm
- Fall Time (Typ) :
- 8 ns
- Number of Pins :
- 3
- Power Dissipation-Max :
- 50W Tc
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 460pF @ 25V
- Rise Time :
- 25ns
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- JESD-30 Code :
- R-PSSO-G2
- Contact Plating :
- Tin
- Pin Count :
- 3
- Pulsed Drain Current-Max (IDM) :
- 52A
- Dual Supply Voltage :
- 100V
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Threshold Voltage :
- 3V
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Nominal Vgs :
- 3 V
- Voltage - Rated DC :
- 100V
- Continuous Drain Current (ID) :
- 13A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 32 ns
- Termination :
- SMD/SMT
- FET Type :
- N-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Height :
- 2.4mm
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Turn On Delay Time :
- 16 ns
- Case Connection :
- DRAIN
- Width :
- 6.2mm
- Lead Free :
- Lead Free
- Number of Terminations :
- 2
- Current Rating :
- 13A
- Resistance :
- 130mOhm
- Series :
- STripFET™ II
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Avalanche Energy Rating (Eas) :
- 70 mJ
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~175°C TJ
- Weight :
- 4.535924g
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 50W
- Base Part Number :
- STD10
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Drain to Source Breakdown Voltage :
- 100V
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- STD10NF10T4
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N-Channel Tape & Reel (TR) 130m Ω @ 5A, 10V ±20V 460pF @ 25V 21nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD10NF10T4 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 70 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 460pF @ 25V.This device conducts a continuous drain current (ID) of 13A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 32 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 52A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 16 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STD10NF10T4 Features
the avalanche energy rating (Eas) is 70 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 32 ns
based on its rated peak drain current 52A.
a threshold voltage of 3V
STD10NF10T4 Applications
There are a lot of STMicroelectronics
STD10NF10T4 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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