STD10N60M6
- Mfr.Part #
- STD10N60M6
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 6.4A DPAK
- Stock
- 42,144
- In Stock :
- 42,144
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Color :
- Black
- Contact Material :
- Phosphor Bronze
- Flange Feature :
- Housing/Shell (4-40)
- FET Feature :
- -
- Shell Material, Finish :
- Steel, Nickel Plated
- Product Category :
- MOSFET
- Operating Temperature :
- -55°C ~ 105°C
- Drain to Source Voltage (Vdss) :
- 600 V
- Features :
- --
- Ingress Protection :
- --
- Supplier Device Package :
- D-PAK (TO-252)
- Base Product Number :
- STD10
- Contact Finish Thickness :
- 30.0µin (0.76µm)
- Current - Continuous Drain (Id) @ 25°C :
- 6.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Connector Style :
- D-Sub, High Density
- Number of Rows :
- 3
- Product Status :
- Active
- Number of Positions :
- 15
- Contact Type :
- Signal
- Shell Size, Connector Layout :
- 1 (DE, E) High Density
- Packaging :
- Tray
- Vgs (Max) :
- ±25V
- Voltage Rating :
- 125V
- Channel Type :
- N Channel
- Continuous Drain Current Id :
- 6.4
- Subcategory :
- MOSFETs
- Power Dissipation (Max) :
- 60W (Tc)
- Contact Form :
- --
- Product Type :
- MOSFET
- Mounting Type :
- Through Hole, Right Angle
- Rds On (Max) @ Id, Vgs :
- 600mOhm @ 3.2A, 10V
- Moisture Sensitivity Level (MSL) :
- --
- Material Flammability Rating :
- UL94 V-0
- Connector Type :
- Receptacle, Female Sockets
- Termination :
- Solder
- Gate Charge (Qg) (Max) @ Vgs :
- 8.8 nC @ 10 V
- Wire Gauge :
- --
- Manufacturer :
- STMicroelectronics
- Vgs(th) (Max) @ Id :
- 4.75V @ 250μA
- RoHS :
- Details
- Tradename :
- MDmesh
- Housing Material :
- Polyamide (PA9T), Nylon 9T
- Current Rating :
- 2A
- FET Type :
- N-Channel
- Series :
- AMPLIMITE HD-22
- Backset Spacing :
- 0.350 (8.89mm)
- Technology :
- Si
- Power Dissipation :
- 60
- Brand :
- STMicroelectronics
- Package :
- Tape and Reel (TR)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Contact Finish :
- Gold
- Input Capacitance (Ciss) (Max) @ Vds :
- 338 pF @ 100 V
- Datasheets
- STD10N60M6

Si N-Channel Tray 600mOhm @ 3.2A, 10V ±25V 338 pF @ 100 V 8.8 nC @ 10 V 600 V TO-252-3, DPak (2 Leads + Tab), SC-63
STD10N60M6 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 338 pF @ 100 V.Operating this transistor requires a 600 V drain to source voltage (Vdss).
STD10N60M6 Features
a 600 V drain to source voltage (Vdss)
STD10N60M6 Applications
There are a lot of STMicroelectronics
STD10N60M6 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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